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S2M0080120K
the part number is S2M0080120K
Part
S2M0080120K
Manufacturer
Description
MOSFET SILICON CARBIDE SIC 1200V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Target Price x Quantity = $0.00
Part
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $11.696 $11.4621 $11.1112 $10.7603 $10.2925 Get Quotation!
Specification
RdsOn(Max)@Id 100mOhm @ 20A, 20V
Vgs(th)(Max)@Id 54 nC @ 20 V
Vgs 4V @ 10mA
FETFeature 231W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 41A (Tc)
ProductStatus Active
Package/Case TO-247-4
GateCharge(Qg)(Max)@Vgs TO-247-4
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 1324 pF @ 1000 V
Series -
Qualification
SupplierDevicePackage Through Hole
FETType SiCFET (Silicon Carbide)
Technology -
Current-ContinuousDrain(Id)@25°C 1200 V
Vgs(Max) +25V, -10V
MinRdsOn) 20V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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