shengyuic
shengyuic
sale@shengyuic.com
S2M0025120D
the part number is S2M0025120D
Part
S2M0025120D
Manufacturer
Description
MOSFET SILICON CARBIDE SIC 1200V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $44.044 $43.1631 $41.8418 $40.5205 $38.7587 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 15mA
Vgs(th)(Max)@Id +25V, -10V
Vgs 130 nC @ 20 V
FETFeature 446W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247AD
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 63A (Tj)
Vgs(Max) 4402 pF @ 1000 V
MinRdsOn) 34mOhm @ 50A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For S2M0025120D
S2M0025120D

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0025120K

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0040120D

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0040120K

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0080120D

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0080120J

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0080120K

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0080120N

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

S2M0120120D

SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!