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S2M0080120J
the part number is S2M0080120J
Part
S2M0080120J
Manufacturer
Description
MOSFET SILICON CARBIDE SIC 1200V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $10.0192 $9.8188 $9.5182 $9.2177 $8.8169 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 10mA
Vgs(th)(Max)@Id +20V, -5V
Vgs 54 nC @ 20 V
FETFeature 234W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-263-7
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
FETType N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C 37A (Tj)
Vgs(Max) 1324 pF @ 1000 V
MinRdsOn) 100mOhm @ 20A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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