shengyuic
shengyuic
sale@shengyuic.com
TPN11006PL,LQ
the part number is TPN11006PL,LQ
Part
TPN11006PL,LQ
Description
MOSFET N-CH 60V 26A 8TSON
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5673 $0.556 $0.5389 $0.5219 $0.4992 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 200µA
Vgs(th)(Max)@Id ±20V
Vgs 17 nC @ 10 V
FETFeature 610mW (Ta), 61W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case 8-PowerVDFN
GateCharge(Qg)(Max)@Vgs 8-TSON Advance (3.1x3.1)
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds -
Series U-MOSIX-H
Qualification
SupplierDevicePackage Surface Mount
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 26A (Tc)
Vgs(Max) 1625 pF @ 30 V
MinRdsOn) 11.4mOhm @ 13A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) 175°C
Related Parts For TPN11006PL,LQ
TPN11003NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 11A 8TSON-ADV

TPN11006NL

TOSHIBACORPORATION

MOSLVN-ch60V17AMAX0.

TPN11006NL,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 17A 8TSON

TPN11006PL,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 26A 8TSON

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!