shengyuic
shengyuic
sale@shengyuic.com
TK2P90E,RQ
the part number is TK2P90E,RQ
Part
TK2P90E,RQ
Description
PB-F POWER MOSFET TRANSISTOR DPA
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2198 $1.1954 $1.1588 $1.1222 $1.0734 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 200µA
Vgs(th)(Max)@Id ±30V
Vgs 12 nC @ 10 V
FETFeature 80W (Tc)
DraintoSourceVoltage(Vdss) 900 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType DPAK
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2A (Ta)
Vgs(Max) 500 pF @ 25 V
MinRdsOn) 5.9Ohm @ 1A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) 150°C
Related Parts For TK2P90E,RQ
TK2P-3.5

Traktronix

2PIN 3.5MM SCREW PLUGGABLE CONN

TK2P60D(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

TK2P60D(TE16L1,NV)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

TK2P90E,RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!