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SQV120N10-3M8_GE3
the part number is SQV120N10-3M8_GE3
Part
SQV120N10-3M8_GE3
Manufacturer
Description
MOSFET N-CH 100V 120A TO262-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 3.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 190 nC @ 10 V
FETFeature 250W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType TO-262-3
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 120A (Tc)
Vgs(Max) 7230 pF @ 25 V
MinRdsOn) 3.8mOhm @ 20A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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