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SIR798DP-T1-GE3
the part number is SIR798DP-T1-GE3
Part
SIR798DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 60A PPAK SO-8
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Datasheets
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Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 130 nC @ 10 V
FETFeature 83W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds Schottky Diode (Body)
Series -
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 60A (Tc)
Vgs(Max) 5050 pF @ 15 V
MinRdsOn) 2.05mOhm @ 20A, 10V
Package Tape & Reel (TR),Cut Tape (CT)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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