1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $35.472 | $34.7626 | $33.6984 | $32.6342 | $31.2154 | Get Quotation! |
RdsOn(Max)@Id | 4.8V @ 22.2mA |
---|---|
Vgs(th)(Max)@Id | +21V, -4V |
Vgs | 170 nC @ 18 V |
FETFeature | 312W |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247N |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 81A (Tj) |
Vgs(Max) | 4532 pF @ 800 V |
MinRdsOn) | 23.4mOhm @ 42A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C (TJ) |
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