1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $131.3995 | $128.7715 | $124.8295 | $120.8875 | $115.6316 | Get Quotation! |
RdsOn(Max)@Id | 5.6V @ 23.5mA |
---|---|
Vgs(th)(Max)@Id | +22V, -4V |
Vgs | 172 nC @ 18 V |
FETFeature | 427W |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | TO-247N |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 118A (Tc) |
Vgs(Max) | 2884 pF @ 500 V |
MinRdsOn) | 22.1mOhm @ 47A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C (TJ) |
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