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MCB60I1200TZ
the part number is MCB60I1200TZ
Part
MCB60I1200TZ
Manufacturer
Description
1200V 90A SIC POWER MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 4V @ 15mA
Vgs(th)(Max)@Id +20V, -5V
Vgs 160 nC @ 20 V
FETFeature -
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 20V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-268AA (D3Pak-HV)
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 90A (Tc)
Vgs(Max) 2790 pF @ 1000 V
MinRdsOn) 34mOhm @ 50A, 20V
Package Tube
PowerDissipation(Max) -40°C ~ 175°C (TJ)
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