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IV1Q12160T4
the part number is IV1Q12160T4
Part
IV1Q12160T4
Manufacturer
Description
SIC MOSFET, 1200V 160MOHM, TO-24
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $19.2921 $18.9063 $18.3275 $17.7487 $16.977 Get Quotation!
Specification
RdsOn(Max)@Id 195mOhm @ 10A, 20V
Vgs(th)(Max)@Id 43 nC @ 20 V
Vgs 2.9V @ 1.9mA
FETFeature 138W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 20A (Tc)
ProductStatus Active
Package/Case TO-247-4
GateCharge(Qg)(Max)@Vgs TO-247-4
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 885 pF @ 800 V
Series -
Qualification
SupplierDevicePackage Through Hole
FETType SiCFET (Silicon Carbide)
Technology -
Current-ContinuousDrain(Id)@25°C 1200 V
Vgs(Max) +20V, -5V
MinRdsOn) 20V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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