IPI80N03S4L-04

Part

IPI80N03S4L-04

Manufacturer

Description

Power Field-Effect Transistor, 80A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Lead Free/ROHS

Datasheets

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Pricing

	1+	10+	100+	1000+	10000+	Custom
Uni Price	$0.58	$0.5684	$0.551	$0.5336	$0.5104	Get Quotation!

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Specification

Min Operating Temperature	-55 °C
Drain to Source Breakdown Voltage	30 V
Gate to Source Voltage (Vgs)	16 V
Fall Time	7 ns
RoHS	Compliant
Max Dual Supply Voltage	30 V
Resistance	3.3 mΩ
Max Operating Temperature	175 °C
Drain to Source Voltage (Vdss)	30 V
Power Dissipation	94 W
Continuous Drain Current (ID)	80 A
Element Configuration	Single
Rise Time	6 ns
Turn-Off Delay Time	37 ns
Halogen Free	Halogen Free
Number of Pins	3
Input Capacitance	5.1 nF
Rds On Max	3.7 mΩ
Case/Package	TO-262-3
Max Power Dissipation	94 W

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