IPI100N04S3-03

Part

IPI100N04S3-03

Manufacturer

Description

Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Lead Free/ROHS

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	1+	10+	100+	1000+	10000+	Custom
Uni Price	$0.78	$0.7644	$0.741	$0.7176	$0.6864	Get Quotation!

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Specification

Min Operating Temperature	-55 °C
Drain to Source Breakdown Voltage	40 V
Gate to Source Voltage (Vgs)	20 V
Fall Time	17 ns
Turn-On Delay Time	30 ns
RoHS	Compliant
Max Dual Supply Voltage	40 V
Max Operating Temperature	175 °C
Drain to Source Voltage (Vdss)	40 V
Power Dissipation	214 W
Continuous Drain Current (ID)	100 A
Element Configuration	Single
Rise Time	16 ns
Turn-Off Delay Time	46 ns
Halogen Free	Halogen Free
Number of Pins	3
Input Capacitance	9.6 nF
Rds On Max	2.8 mΩ
Case/Package	TO-262-3
Max Power Dissipation	214 W

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INFINEON

Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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