shengyuic
shengyuic
sale@shengyuic.com
GT095N10S
the part number is GT095N10S
Part
GT095N10S
Manufacturer
Description
N100V, 21A,RD<9.5M@10V,VTH1.2V~2
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.327 $0.3205 $0.3106 $0.3008 $0.2878 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 29.4 nC @ 10 V
FETFeature 3.1W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOP
InputCapacitance(Ciss)(Max)@Vds Standard
Series SGT
Qualification
SupplierDevicePackage 8-SOIC (0.154, 3.90mm Width)
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 11A (Tc)
Vgs(Max) 2131 pF @ 50 V
MinRdsOn) 10.5mOhm @ 20A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For GT095N10S
GT090N06D52

Goford Semiconductor

MOSFET 2N-CH 60V 40A 8DFN

GT090N06K

Goford Semiconductor

MOSFET, N-CH, 60V,45A,TO-252

GT090N06S

Goford Semiconductor

N60V,14A,RD<8M@10V,VTH1.0V~2.4V

GT095N04D3

Goford Semiconductor

MOSFET N-CH 40V 47A DFN3*3-8L

GT095N04D5

Goford Semiconductor

MOSFET N-CH 40V 54A DFN5*6-8L

GT095N10D5

Goford Semiconductor

N100V,RD(MAX)<11M@10V,RD(MAX)<15

GT095N10K

Goford Semiconductor

N100V, RD(MAX)<10.5M@10V,RD(MAX)

GT095N10S

Goford Semiconductor

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!