1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $428.0975 | $419.5356 | $406.6926 | $393.8497 | $376.7258 | Get Quotation! |
RdsOn(Max)@Id | 2.8V @ 1mA |
---|---|
Vgs(th)(Max)@Id | +6V, -4V |
Vgs | 3 nC @ 5 V |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 200 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 4-SMD |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | e-GaN® |
Qualification | |
SupplierDevicePackage | 4-SMD, No Lead |
FETType | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
Vgs(Max) | 150 pF @ 100 V |
MinRdsOn) | 130mOhm @ 4A, 5V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
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