shengyuic
shengyuic
sale@shengyuic.com
A2T18H455W23NR6
the part number is A2T18H455W23NR6
Part
A2T18H455W23NR6
Manufacturer
Description
RF MOSFET LDMOS 31.5V OM1230-42
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $158.211 $155.0468 $150.3004 $145.5541 $139.2257 Get Quotation!
Specification
Configuration Chassis Mount
Voltage-Test 14.5dB
CurrentRating(Amps) 10µA
ProductStatus Obsolete
Package/Case OM-1230-4L2S
Grade
MountingType 1.08 A
Power-Output 65 V
Current-Test 56dBm
Voltage-Rated OM-1230-4L2S
Series -
Qualification
SupplierDevicePackage 31.5 V
Technology LDMOS
Frequency -
Package Tape & Reel (TR)
Gain 1.805GHz ~ 1.88GHz
NoiseFigure -
Related Parts For A2T18H455W23NR6
A2T14H450-23NR6

NXP USA Inc.

RF MOSFET LDMOS 31V OM1230-42

A2T18H100-25SR3

NXP USA Inc.

RF MOSFET LDMOS 28V NI780

A2T18H160-24SR3

NXP USA Inc.

RF MOSFET LDMOS 28V NI780

A2T18H410-24SR6

NXP USA Inc.

RF MOSFET LDMOS 28V NI1230

A2T18H450W19SR6

NXP USA Inc.

RF MOSFET LDMOS NI1230

A2T18H455W23NR6

NXP Semiconductors

RF MOSFET LDMOS 31.5V OM1230-42

A2T18H455W23NR6

NXP USA Inc.

RF MOSFET LDMOS 31.5V OM1230-42

A2T18S160W31GSR3

NXP USA Inc.

RF MOSFET LDMOS 28V NI780

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!