shengyuic
shengyuic
sale@shengyuic.com
TP65H480G4JSG-TR
the part number is TP65H480G4JSG-TR
Part
TP65H480G4JSG-TR
Manufacturer
Description
GANFET N-CH 650V 3.6A 3PQFN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.7027 $2.6486 $2.5676 $2.4865 $2.3784 Get Quotation!
Specification
RdsOn(Max)@Id 2.8V @ 500µA
Vgs(th)(Max)@Id ±18V
Vgs 9 nC @ 8 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature 3-PQFN (5x6)
DriveVoltage(MaxRdsOn 8V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 3-PowerTDFN
InputCapacitance(Ciss)(Max)@Vds 13.2W (Tc)
Series -
Qualification
SupplierDevicePackage 760 pF @ 400 V
FETType N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Current-ContinuousDrain(Id)@25°C 3.6A (Tc)
Vgs(Max) -
MinRdsOn) 560mOhm @ 3.4A, 8V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
Related Parts For TP65H480G4JSG-TR
TP65H015G5WS

Transphorm

650 V 95 A GAN FET

TP65H035G4QS

Transphorm

650 V 46.5 A GAN FET HIGH VOLTAG

TP65H035G4WS

Transphorm

GANFET N-CH 650V 46.5A TO247-3

TP65H035G4WSQA

Transphorm

650 V 46.5 GAN FET

TP65H035WS

Transphorm

GANFET N-CH 650V 46.5A TO247-3

TP65H035WSQA

Transphorm

GANFET N-CH 650V 47.2A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!