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TN2130MF-G-VAO
the part number is TN2130MF-G-VAO
Part
TN2130MF-G-VAO
Manufacturer
Description
MOSFET, N-CHANNEL ENHANCEMENT-MO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 2.4V @ 1mA
Vgs(th)(Max)@Id ±20V
Vgs -
FETFeature 360mW (Ta)
DraintoSourceVoltage(Vdss) 300 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 6-DFN (2x2)
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage 6-VDFN Exposed Pad
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 85mA (Tj)
Vgs(Max) 50 pF @ 25 V
MinRdsOn) 25Ohm @ 120mA, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TA)
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