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SIS778DN-T1-GE3
the part number is SIS778DN-T1-GE3
Part
SIS778DN-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 35A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 2.2V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 42.5 nC @ 10 V
FETFeature 52W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds Schottky Diode (Body)
Series -
Qualification
SupplierDevicePackage PowerPAK® 1212-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 35A (Tc)
Vgs(Max) 1390 pF @ 15 V
MinRdsOn) 5mOhm @ 10A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -50°C ~ 150°C (TJ)
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