sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 1.25V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±12V |
| Vgs | 11 nC @ 4.5 V |
| FETFeature | 510mW (Ta), 4.15W (Tc) |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-236AB |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Ta) |
| Vgs(Max) | 1000 pF @ 10 V |
| MinRdsOn) | 55mOhm @ 2.4A, 4.5V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | 150°C (TJ) |
Nexperia
NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!