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LSIC1MO170E1000
the part number is LSIC1MO170E1000
Part
LSIC1MO170E1000
Manufacturer
Description
SICFET N-CH 1700V 5A TO247-3L
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 4V @ 1mA
Vgs(th)(Max)@Id +22V, -6V
Vgs 15 nC @ 20 V
FETFeature 54W (Tc)
DraintoSourceVoltage(Vdss) 1700 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 15V, 20V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247AD
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 5A (Tc)
Vgs(Max) 200 pF @ 1000 V
MinRdsOn) 1Ohm @ 2A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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