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BSP89E6327
the part number is BSP89E6327
Part
BSP89E6327
Manufacturer
Description
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Specification
Operating Temperature -55u00b0C ~ 150u00b0C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C 350mA (Ta)
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 108u00b5A
Supplier Device Package PG-SOT223-4
Drain to Source Voltage (Vdss) 240 V
Series SIPMOSu00ae
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Part Status Obsolete
Vgs (Max) u00b120V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
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